Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions
…, S Bhattacharya, E Van Brunt… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
… -kV SiC MOSFET with 15-kV SiC IGBT for the same dv/dt condition; 2) the switching frequency
limits of 15-kV … 10-kV output voltage; and 3) comparative evaluation of 15-kV SiC MOSFET …
limits of 15-kV … 10-kV output voltage; and 3) comparative evaluation of 15-kV SiC MOSFET …
New generation 6.5 kV SiC power MOSFET
S Sabri, E Van Brunt, A Barkley, B Hull… - 2017 IEEE 5th …, 2017 - ieeexplore.ieee.org
… Then, the static performance of the 6.5 kV/30 A SiC MOSFET is … kV Si-IGBTs in a similar
thermal environment are also discussed. Finally, our findings on the gate reliability of the 6.5 kV/…
thermal environment are also discussed. Finally, our findings on the gate reliability of the 6.5 kV/…
10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems
… We also developed 15 kV/10 A SiC … 15 kV SiC MOSFET is the highest voltage rated unipolar
power switch. Compared to the commercial 6.5 kV Silicon (Si) IGBTs, these 10 kV and 15 kV …
power switch. Compared to the commercial 6.5 kV Silicon (Si) IGBTs, these 10 kV and 15 kV …
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
… voltages from 5 kV to 10 kV, whereas the 15 kV MOSFET developed … 5 kV to 14 kV. The total
energy losses at room temperature are about 17 mJ for the 10 kV MOSFET switched at 10 kV…
energy losses at room temperature are about 17 mJ for the 10 kV MOSFET switched at 10 kV…
Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters
… of the 15 kV n-IGBT have been reported for the first time. The turn-on and turn-off transitions
of the 15 kV, 20 A IGBT have been experimentally evaluated up to 11 kV. This is highest …
of the 15 kV, 20 A IGBT have been experimentally evaluated up to 11 kV. This is highest …
27 kV, 20 A 4H-SiC n-IGBTs
E Van Brunt, L Cheng, MJ O'Loughlin… - Materials Science …, 2015 - Trans Tech Publ
In this work, we report our recently developed 27 kV, 20 A 4H-SiC n-IGBTs. Blocking voltages
exceeding 24 kV were achieved by utilizing thick (210 μm and 230 μm), lightly doped N-…
exceeding 24 kV were achieved by utilizing thick (210 μm and 230 μm), lightly doped N-…
22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation
EV Brunt, L Cheng, M O'Loughlin… - 2014 IEEE 26th …, 2014 - ieeexplore.ieee.org
… a record blocking voltage of 22.6 kV at a leakage current of 9 … of reduced forward voltage
drops in the 22 kV SiC n-IGBTs. The … when switching the 22 kV SiC n-IGBTs at 13 kV and 20 A …
drops in the 22 kV SiC n-IGBTs. The … when switching the 22 kV SiC n-IGBTs at 13 kV and 20 A …
20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications
…, K Lam, J Richmond, E Van Brunt… - 2013 19th IEEE …, 2013 - ieeexplore.ieee.org
… In this paper, we report our recently developed 2 cm 2 , 20 kV SiC p-type gate turnoff GTO
thyristor with very low differential on-resistance for advanced pulsed power applications. …
thyristor with very low differential on-resistance for advanced pulsed power applications. …
Experimental switching frequency limits of 15 kV SiC N-IGBT module
… voltage level make the 15 kV SiC IGBTs promising for smart-grid … [n the present study, a 5
11m buffer layer thick 15 kV N-IGBT … studies on 15 kV [GST frequency capability reported in [6]. …
11m buffer layer thick 15 kV N-IGBT … studies on 15 kV [GST frequency capability reported in [6]. …
20 kV 4H-SiC N-IGBTs
…, MJ O'Loughlin, J Clayton, E van Brunt… - Materials Science …, 2014 - Trans Tech Publ
… Switching measurements with a supply voltage of 8 kV were … A 55 kW, 1.7 kV to 7 kV boost
converter operating at 5 kHz … 6 shows the waveforms from a 55 kW, 1.4 kV to 7 kV boost …
converter operating at 5 kHz … 6 shows the waveforms from a 55 kW, 1.4 kV to 7 kV boost …