Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions

…, S Bhattacharya, E Van Brunt… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
… -kV SiC MOSFET with 15-kV SiC IGBT for the same dv/dt condition; 2) the switching frequency
limits of 15-kV … 10-kV output voltage; and 3) comparative evaluation of 15-kV SiC MOSFET …

New generation 6.5 kV SiC power MOSFET

S Sabri, E Van Brunt, A Barkley, B Hull… - 2017 IEEE 5th …, 2017 - ieeexplore.ieee.org
… Then, the static performance of the 6.5 kV/30 A SiC MOSFET is … kV Si-IGBTs in a similar
thermal environment are also discussed. Finally, our findings on the gate reliability of the 6.5 kV/…

10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

V Pala, EV Brunt, L Cheng, M O'Loughlin… - 2014 IEEE Energy …, 2014 - ieeexplore.ieee.org
… We also developed 15 kV/10 A SiC … 15 kV SiC MOSFET is the highest voltage rated unipolar
power switch. Compared to the commercial 6.5 kV Silicon (Si) IGBTs, these 10 kV and 15 kV

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

JW Palmour, L Cheng, V Pala, EV Brunt… - 2014 IEEE 26th …, 2014 - ieeexplore.ieee.org
… voltages from 5 kV to 10 kV, whereas the 15 kV MOSFET developed … 5 kV to 14 kV. The total
energy losses at room temperature are about 17 mJ for the 10 kV MOSFET switched at 10 kV

Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters

…, S Bhattacharya, SH Ryu, E Van Brunt… - 2013 IEEE energy …, 2013 - ieeexplore.ieee.org
… of the 15 kV n-IGBT have been reported for the first time. The turn-on and turn-off transitions
of the 15 kV, 20 A IGBT have been experimentally evaluated up to 11 kV. This is highest …

27 kV, 20 A 4H-SiC n-IGBTs

E Van Brunt, L Cheng, MJ O'Loughlin… - Materials Science …, 2015 - Trans Tech Publ
In this work, we report our recently developed 27 kV, 20 A 4H-SiC n-IGBTs. Blocking voltages
exceeding 24 kV were achieved by utilizing thick (210 μm and 230 μm), lightly doped N-…

22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation

EV Brunt, L Cheng, M O'Loughlin… - 2014 IEEE 26th …, 2014 - ieeexplore.ieee.org
… a record blocking voltage of 22.6 kV at a leakage current of 9 … of reduced forward voltage
drops in the 22 kV SiC n-IGBTs. The … when switching the 22 kV SiC n-IGBTs at 13 kV and 20 A …

20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

…, K Lam, J Richmond, E Van Brunt… - 2013 19th IEEE …, 2013 - ieeexplore.ieee.org
… In this paper, we report our recently developed 2 cm 2 , 20 kV SiC p-type gate turnoff GTO
thyristor with very low differential on-resistance for advanced pulsed power applications. …

Experimental switching frequency limits of 15 kV SiC N-IGBT module

…, S Bhattacharya, SH Ryu, E Van Brunt… - … 2014-ECCE ASIA), 2014 - ieeexplore.ieee.org
… voltage level make the 15 kV SiC IGBTs promising for smart-grid … [n the present study, a 5
11m buffer layer thick 15 kV N-IGBT … studies on 15 kV [GST frequency capability reported in [6]. …

20 kV 4H-SiC N-IGBTs

…, MJ O'Loughlin, J Clayton, E van Brunt… - Materials Science …, 2014 - Trans Tech Publ
… Switching measurements with a supply voltage of 8 kV were … A 55 kW, 1.7 kV to 7 kV boost
converter operating at 5 kHz … 6 shows the waveforms from a 55 kW, 1.4 kV to 7 kV boost …